Title:
PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH04305093
Kind Code:
A
Abstract:
PURPOSE:To easily discharge a single crystal from the crucible at the time of producing the compd. semiconductor single crystal by the liq. encapsulation Czochralski method by introducing steam into the crucible when the crystal growth is almost finished. CONSTITUTION:A compd. semiconductor material and a liq. encapsulating medium are charged into a crucible, the material is heated and melted to grow a compd. semiconductor single crystal, and then steam is introduced into the crucible.
Inventors:
NISHIO JOSHI
Application Number:
JP12200391A
Publication Date:
October 28, 1992
Filing Date:
March 29, 1991
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
C30B11/00; C30B15/00; C30B27/00; H01L21/208; (IPC1-7): C30B11/00; C30B15/00; C30B27/00; H01L21/208
Attorney, Agent or Firm:
Norio Ohu
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