PRODUCTION OF CRYSTALLINE SILICON SEMICONDUCTOR DEVICE

Title:

PRODUCTION OF CRYSTALLINE SILICON SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH08204208

Kind Code:

A

Abstract:

PURPOSE: To prevent the activation of impurities by irradiating a crystalline silicon coating film with ions containing impurities for imparting N- or P-type conductivity thereby adding N- or P-type impurities, at a specified concentration, to the silicon coating film.

CONSTITUTION: Underlying silicon oxide film 102, amorphous silicon and nickel oxide are deposited sequentially on a glass substrate 101. It is then annealed to crystallize the silicon film 103. Nickel functions as a catalytic element for accelerating crystallization of amorphous silicon and the concentration thereof is set in the range of 1×1015-1×1019 atom/cm3. Since the estimated density of defect in the crystalline silicon is on the order of 1×1018 atom/cm3, impurities having concentration lower than 1×1018 atom/cm3 are absorbed mainly at the grain boundary and not activated substantially.

Inventors:

YAMAZAKI SHUNPEI
KUSUMOTO NAOTO
ONUMA HIDETO
TAKEMURA YASUHIKO

Application Number:

JP3296995A

Publication Date:

August 09, 1996

Filing Date:

January 30, 1995

Export Citation:

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Assignee:

SEMICONDUCTOR ENERGY LAB

International Classes:

H01L21/20; H01L21/265; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/20; H01L21/265; H01L21/336

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