Title:
PRODUCTION OF DEVICE BY DRY ETCHING
Document Type and Number:
Japanese Patent JP3309620
Kind Code:
B2
Abstract:
PURPOSE: To micromachine the etching part of a silicon substrate vertically into an intricate shape where the corner of the bottom is slightly rounded.
CONSTITUTION: A substrate 1 of single crystal silicon is applied, at a part not to be micromachined, with a mask 2 of aluminum film. The unmasked part is then etched by generating plasma of mixture gas of hexafluorosulfur and oxygen. The etched part is also applied with masks 3, 4 before being etched furthermore.
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Inventors:
Tomoaki Goto
Koji Matsushita
Koji Matsushita
Application Number:
JP1130895A
Publication Date:
July 29, 2002
Filing Date:
January 27, 1995
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H05H1/46; C23F4/00; C30B33/12; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23F4/00
Domestic Patent References:
| JP5190873A | ||||
| JP6204183A | ||||
| JP627168A |
Other References:
【文献】国際公開94/18697(WO,A1)
Attorney, Agent or Firm:
Masaharu Shinobe