Title:
PRODUCTION DEVICE FOR SEMICONDUCTOR CRYSTAL
Document Type and Number:
Japanese Patent JPS6476991
Kind Code:
A
Abstract:
PURPOSE:To improve instability of temperature control, to contrive to reduce change of crystal temperature and to stably grow high-quality crystal, by making a crucible of a production device for semiconductor device, comprising a multiple structure consisting of an inner crucible and an outer crucible made of specific different materials. CONSTITUTION:An inner crucible 2 is made of a material such as PBN or quartz not to be reacted with semiconductor melt 14, an outer crucible 13 is formed from a material such as an opaque ceramic material (e.g. Al3N4) or high-purity BN 12 to screen infrared rays and optionally the outer crucible 13 is doubly or triply set around the outer periphery of the inner crucible 12 to constitute a multiple crucible 11 of a production device of semiconductor crystal. Crystal 15 is grown from melt 14 of a compound semiconductor in the multiple crucible 11 set in the interior of a crucible supporting member 18 held by a crucible supporting shaft 19 through a pulling shaft 17.
Inventors:
OZAWA SHOICHI
YOSHIDA KIYOTERU
KIKUTA TOSHIO
YOSHIDA KIYOTERU
KIKUTA TOSHIO
Application Number:
JP23208987A
Publication Date:
March 23, 1989
Filing Date:
September 18, 1987
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD
International Classes:
C30B15/10; C30B15/12; C30B27/02; H01L21/02; (IPC1-7): C30B15/10; C30B27/02; H01L21/02
Domestic Patent References:
| JPS59213697A | 1984-12-03 |
Attorney, Agent or Firm:
Hiroshi Wakabayashi