Title:
PRODUCTION DEVICE OF SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH02133389
Kind Code:
A
Abstract:
PURPOSE:To prevent the molten raw material from generating solidification in the vicinity of partition member when the inside or the crucible receiving molten silicon raw material is divided with the partition member having small openings and the raw material is continuously supplied in the outside and a single crystal is pulled up from the inside by constituting the partition member of foamed silica glass. CONSTITUTION:The partition member 11 which or a part of which consists of foamed silica glass is provided in the crucible 2 receiving molten silicon raw material 4 so as to enclose the silicon single crystal 6 to be pulled up, and the small openings 13 are provided in the partition member 11 so that the molten silicon raw material 4 is allowed to move quietly. The silicon single crystal 5 is pulled up from the inside of the partition member while silicon raw material 18 is continuously supplied to the outside of the partition member 11 from a supplying unit 14. Thus, as the partition member 11 consists of foamed silica glass, the heat radiation from the molten liquid 4 near the partition member 11 is restrained, and the molten liquid 4 is prevented from generating solidification.
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Inventors:
SHIMA YOSHINOBU
KAMIO HIROSHI
KAMIO HIROSHI
Application Number:
JP28401788A
Publication Date:
May 22, 1990
Filing Date:
November 11, 1988
Export Citation:
Assignee:
NIPPON KOKAN KK
International Classes:
C30B15/02; C30B15/10; C30B15/12; C30B15/22; C30B15/14; C30B29/06; H01L21/208; (IPC1-7): C30B15/22; C30B29/06; H01L21/208
Domestic Patent References:
| JPH0280392A | 1990-03-20 |
Attorney, Agent or Firm:
Muneharu Sasaki (3 outside)