PURPOSE: To produce the electrostatic valve of an extremely low driving voltage by introducing a dopant under specific conditions into an singe crystal Si substrate, then covering the Si substrate with a mask material of prescribed patterns and anisotropically etching the substrate.

CONSTITUTION: A diaphragm 2 which acts as a moving part is formed on the Si substrate 1 and a driving electrode 4 is produced by applying a deformation to the diaphragm, by which the electrostatic valve is obtd. The dopant is, thereupon, introduced to the prescribed region of the single crystal Si substrate 1 by adopting a high-energy ion beam implantation method of ≥200KeV until such condition as the etching speed of the anisotropic etching decreases extraordinarily. This Si substrate is thereafter subjected to the anisotropic etching while the substrate is held covered with the mask material 11 of the prescribed patterns. The diaphragm 2 is formed in such a manner. As a result, the electrostatic valve and an IC circuit for executing the driving control, thereof, etc., are integrated in the same substrate.