Title:
PRODUCTION OF DOUBLE OXIDE THIN FILM
Document Type and Number:
Japanese Patent JPH0632613
Kind Code:
A
Abstract:
PURPOSE: To provide a process for the production of a double oxide thin film having excellent film property and low reactivity with a substrate.
CONSTITUTION: A PZT thin film 9 is formed on the surface of a silicon oxide film 5 by forming a PZT film 7 by high-frequency sputtering, applying a sol solution to the surface of the PZT thin film by sol-gel process and drying and baking the applied solution. The PZT film 7 can be formed under a condition having low reactivity with the substrate and the cracks and voids in the crystal structure of a PZT film can be eliminated by the baking of the applied sol solution.
Inventors:
KANZAWA AKIRA
Application Number:
JP18931692A
Publication Date:
February 08, 1994
Filing Date:
July 16, 1992
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
C01G1/00; C01G25/00; C30B23/08; C30B25/02; H01L37/02; H01L41/22; (IPC1-7): C01G1/00; C01G25/00; C30B23/08; C30B25/02; H01L37/02; H01L41/24
Attorney, Agent or Firm:
Furuya Eiko (2 outside)
Next Patent: REFRACTORY COVERING MATERIAL