PRODUCTION OF ELECTRODE PLATE FOR PLASMA ETCHING AND ELECTRODE PLATE FOR PLASMA ETCHING

Japanese Patent JP3891313

B2

PROBLEM TO BE SOLVED: To reduce foreign materials dropped onto a wafer surface and sticking thereto at the time of etching such as carbon grains and provide an electrode plate usable for a long period by forming a small through-hole in a resin molding product having a Shore hardness within a specific range, then carrying out the carbonization and high-temperature treatment in a nonoxoidizing atmosphere and regulating the pore diameter in a glassy carbon to a specified value or below.
SOLUTION: A resin molding product having 60-110, preferably 70-100 Shore hardness is used and the pore diameter in a glassy carbon is regulated to ≤100μm. When the Shore hardness is <60, a deteriorated layer is produced with the frictional heat of a drill when forming a small through-hole and selectively damaged with a plasma at the time of etching to cause the dropping of carbon grains, etc. When the Shore hardness exceeds 110, the drill is severely damaged and, e.g. a machined surface is plucked off to cause flaws. The damaged surface is selectively damaged with the plasma. A furan resin, a phenol resin, an unsaturated polyester resin, etc., are used as the starting raw material for obtaining the resin molding.

Kojiro Ota
Mitsushi Kamada
Small blacksmith Kazumi
Takayuki Suzuki

JP30644696A

March 14, 2007

November 18, 1996

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Hitachi Chemical Co., Ltd.

C04B35/52; C01B31/02; C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): C04B35/52; C01B31/02; C23F4/00; H01L21/3065

JP62252942A
JP7022385A

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