PURPOSE: To solve the problems of conventional process caused by the deterioration of the matching between the orientation of a substrate and that of a ferroelectric thin film by forming a ferroelectric thin film on a substrate under a condition to make a raw material solution easily form a perovskite structure.

CONSTITUTION: For example, an alcohol solution of an organometallic compound composed mainly of a lead titanate zirconate (Pb(Zr, Ti)O3) is applied to an MgO(100) single crystal substrate 1 to form a lead titanate zirconate thin film (PZT thin film) having a thickness of 350A, the film is dried at 190°C for 10min to remove the alcohol and organic components and heat-treated at 600°C for 5min in an electric furnace under an oxygen flow of 6L/sec to crystallize the PZT thin film in the form of a perovskite structure and the alcohol solution of the organometallic compound is applied to the pure PZT thin film 3 to form a PZT thin film 4. The above operations are repeated and the formed thin film 5 is inserted into an electric furnace and heated at 600°C for 60min to crystallize the PZT thin film 5 also to perovskite structure and obtain a pure PZT thin film having a thickness of 1500A.