Title:
PRODUCTION OF II-VI OR III-V COMPOUND SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3689943
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To decrease defects in a crystal by coating the inner surface of a crucible with a vitreous material having a low softening point in which a powder having a higher melting point than a polycrystalline compd. is dispersed, introducing a polycrystalline compd. into the crucible, heating the compd. to melt it, and cooling it to grow a single crystal.
SOLUTION: A mixture liquid is prepared by adding a solvent such as alcohol to a mixture of a solid powder such as a BN powder having about 0.05-50μm average particle size and higher melting point than a polycrystal line compd., a B2O5 powder having a lower softening point than the polycrystalline compd. and an SrO2 powder by about 5-60mol% of the mixture. The mixture soln. is applied on the inner surface of a crucible and heated at about 300-1200°C in an oxidative atmosphere to cover the inner surface of the crucible with a coating film of the mixture layer comprising a vitreous material dispersed with solid powders. Then, a seed crystal of a II-VI compd. such as CdTe or a III-V compd. such as GaAs is disposed in the crucible, into which a polycrystalline II-VI compd. or III-V compd. is added. The crucible is sealed in an ampule and the compd. is molten by a VB method or the like to grow a single crystal to obtain a single crystal of the II-VI compd. or the III-V compd.
Inventors:
Tomohiro Kawase
Application Number:
JP23304395A
Publication Date:
August 31, 2005
Filing Date:
September 11, 1995
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
C30B11/00; C30B27/00; C30B29/40; C30B29/48; H01L21/208; H01L21/368; (IPC1-7): C30B29/48; C30B11/00; C30B27/00; C30B29/40; H01L21/208; H01L21/368
Domestic Patent References:
| JP49042419B1 | ||||
| JP3080180A | ||||
| JP1133993A | ||||
| JP3122097A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Hidehiko Ito
Toshio Morita
Hidehiko Ito