To provide a production method for a dopant-added compound semiconductor single crystal, which method does not require the formation of an in-furnace temperature distribution for uniformizing a dopant concentration and therefore is high in productivity.

In the production method, a growth container 1 which has a shape of a bottomed cylinder, contains a seed crystal 2, a material 3, and a liquid sealant 4, and is installed vertically is used; and the material is melted by heating to give it a specified temperature distribution by using electric-furnace heat-emitting bodies 6, 7 arranged so as to surround the growth container, thus causing a compound semiconductor single crystal to grow in the vertical direction. In the method, a hole 10 is bored in a block-shaped material 3a and 3b; a dopant 9 is charged into the hole 10; the material 3a and 3b as the material 3 is placed in the growth container 1; thus, the dopant 9 is prevented from falling down to the seed crystal part, and an n-type or p-type compound semiconductor single crystal is grown in such a state that the position of the dopant 9 is fixed at a position above and apart from the seed crystal part.