Title:
PRODUCTION METHOD OF HIGH PURITY SILICON
Document Type and Number:
Japanese Patent JP2010100508
Kind Code:
A
Abstract:
To reduce the equipment cost and energy cost as well as to improve the yield of raw material silicon, and to provide a production method of high purity silicon with stable qualities and high productivity, for producing high purity silicon for a solar cell from a low-grade metal silicon by a metallurgical refining method.
A melting furnace for melting metal silicon has two or more types of heating devices such as an electromagnetic induction system, a plasma system and an electron beam system. Impurities included in raw material silicon are efficiently removed by subjecting melted silicon to a combination of a vacuum process with an oxidation process and a reduction process in different gas atmospheres in a single melting furnace.
Inventors:
NAKASONE TOYOKAZU
NOMURA EIJI
NAKAHORI KIYOSHI
NOMURA EIJI
NAKAHORI KIYOSHI
Application Number:
JP2008294923A
Publication Date:
May 06, 2010
Filing Date:
October 23, 2008
Export Citation:
Assignee:
NAKASONE TOYOKAZU
SANEIJI KK
SANEIJI KK
International Classes:
C01B33/037
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