Title:
PRODUCTION METHOD OF OXIDE SINGLE CRYSTAL, AND OXIDE SINGLE CRYSTAL PULLING-UP DEVICE
Document Type and Number:
Japanese Patent JP2018177542
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a production method of an oxide single crystal capable of suppressing generation of a void.SOLUTION: In a production method of an oxide single crystal for rearing a single crystal of oxide from a melt of an oxide raw material in a crucible by a pulling-up method, control is carried out for a diameter of the single crystal reared by adjusting output from a heating apparatus for heating the melt in the crucible, and a temperature drop rate v at the crucible bottom during rearing of the single crystal is set at 6°C/h or lower and/or a continuous temperature drop ▵T at the crucible bottom during rearing of the single crystal is set to be lower than 12°C.SELECTED DRAWING: Figure 2
Inventors:
ABE ATSUSHI
Application Number:
JP2017073794A
Publication Date:
November 15, 2018
Filing Date:
April 03, 2017
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C30B29/30; C30B15/22; F27B14/06; F27B14/14; F27B14/20
Domestic Patent References:
| JPS549173A | 1979-01-23 | |||
| JPS5560092A | 1980-05-06 | |||
| JP2011037643A | 2011-02-24 | |||
| JPS5654299A | 1981-05-14 | |||
| JP2017186188A | 2017-10-12 | |||
| JP2018145071A | 2018-09-20 |
Attorney, Agent or Firm:
Hideaki International Patent Office