PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

Title:

PRODUCTION METHOD OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPS51123562

Kind Code:

A

Abstract:

PURPOSE:To form selectively a semiresistance layer or change the scattered concentration of O-N of a semiconductor device having a surface stabilizing film.

Inventors:

AOKI TERUAKI
MATSUSHITA TAKESHI
MIFUNE TADAYOSHI
ABE MOTOAKI

Application Number:

JP4837975A

Publication Date:

October 28, 1976

Filing Date:

April 21, 1975

Export Citation:

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Assignee:

SONY CORP

International Classes:

H01L29/73; H01L21/00; H01L21/265; H01L21/329; H01L21/331; H01L21/76; H01L23/29; H01L29/78; (IPC1-7): H01L21/265; H01L21/31; H01L21/82; H01L29/10; H01L29/42; H01L29/94

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