Title:
PRODUCTION METHOD OF SEMICONDUCTOR THERMAL SENSITIVE ELEMENT
Document Type and Number:
Japanese Patent JPS5359385
Kind Code:
A
Abstract:
PURPOSE:To easily obtain a thermal sensitive element of a simple substance or to be incorporated in IC, by utilizing the fact that a resistance temperature coefficient is increased if impurity with a density of 10<17> to 10<19>/cm<3> is induced i polycrystal Si.
Inventors:
YOSHIHARA TSUTOMU
YASUOKA MASAHIKO
YASUOKA MASAHIKO
Application Number:
JP13489876A
Publication Date:
May 29, 1978
Filing Date:
November 09, 1976
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01K7/22; G01K7/16; H01L37/00; (IPC1-7): G01K7/16; H01L37/00
Domestic Patent References:
| JPS49105497A | 1974-10-05 | |||
| JPS49114382A | 1974-10-31 |