To provide the production by which the thin film can be formed at a comparatively low substrate temp. while using, as its gaseous raw materials, gaseous materials generally used for a semiconductor.
In this production, SiH4 and CH4, both of which are used as the gaseous raw materials and H2 used as the gaseous diluent are introduced into a plasma formation chamber 1a through a gas introducing port 1G. At the time of forming a thin film by using a plasma formed in the plasma formation chamber 1a, an AC bias voltage having a frequency within the range of about 1 to 500kHz and a power density within the range of about 0.09 to 0.22W/cm2 is applied to a substrate 10 that is held on a substrate supporting base 4 in a reaction chamber 1b, from a frequency-variable AC power source AC through a matching box 3.
SAKAI ATSUSHI
KITAGAWA MASATOSHI
MATSUSHITA ELECTRIC IND CO LTD
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