Title:
PRODUCTION OF MOS SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5265686
Kind Code:
A
Abstract:
PURPOSE: To improve the dielectric strength of the sourcedrain junction of a MOS semiconductor device by providing a spacing between the source-drain regions and channel stoper regions and using the lowness of the impurity concentration of the semiconductor substrate.
Inventors:
SAKIYAMA KEIZOU
Application Number:
JP14319175A
Publication Date:
May 31, 1977
Filing Date:
November 27, 1975
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L27/08; H01L21/265; H01L21/31; H01L21/316; H01L29/78; (IPC1-7): H01L21/265; H01L21/31; H01L21/72; H01L29/78
Other References:
PHILIPS PES REPTS#N26=1971NL