To provide a method to easily and efficiently form a fine NESA film on a glass substrate with high accuracy at a low cost.

The producing method of a NESA film having a fine pattern includes a first process to apply a photoresist on a glass substrate, to expose through a pattern mask and to develop to form a photoresist film having a specified pattern, a second process to form a NESA film by normal pressure chemical vapor deposition method all over the glass substrate where the photoresist film of the pattern above described is formed, and a third process to remove the photoresist film on the glass substrate with the NESA film on the photoresist film. In the second process, the NESA film is formed by instantly vaporizing a source soln. comprising an aq. soln. of butyltrichlorotin with addition of antimony trichloride or trifluoroacetic acid as a dopant to prepare a mixture gas and then injecting the obtd. mixture gas with an air carrier through a slit nozzle to perform normal pressure chemical vapor deposition on a glass substrate heated to the temp. range 400, to 500°C.