Title:
PRODUCTION OF OXIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH0782087
Kind Code:
A
Abstract:
PURPOSE: To control the growing shape of a perovskite-type oxide single crystal for elements such as optical wavelength conversion element and to improve the processing yield of the element.
CONSTITUTION: A perovskite-type oxide single crystal having a general formula ABO3 (A is Li, K or Na and B is Nb or Ta or A is Ba and B is Ti) is produced by TSSG process by growing the crystal in a specific direction, pulling up the most part of the grown crystal until the crystal is brought into contact with the hot solution at a part of the bottom of the crystal, and continuing the growth of new crystal from the contacting part of the crystal and the solution.
Inventors:
HOUA CHIYUN ZEN
CHIYON TAU CHIYON
REON CHIYUU RIMU
KUMAGAI HIROHIKO
HIRANO MASAHIRO
CHIYON TAU CHIYON
REON CHIYUU RIMU
KUMAGAI HIROHIKO
HIRANO MASAHIRO
Application Number:
JP22702093A
Publication Date:
March 28, 1995
Filing Date:
September 13, 1993
Export Citation:
Assignee:
ASAHI GLASS CO LTD
International Classes:
C30B15/00; C30B17/00; C30B29/24; G02F1/35; G02F1/355; (IPC1-7): C30B29/24; C30B15/00; C30B17/00; G02F1/35
Attorney, Agent or Firm:
Kenji Izumina
Next Patent: METHOD FOR GROWING SINGLE CRYSTAL