Title:
PRODUCTION OF POLYCRYSTALLINE SEMICONDUCTOR INGOT AND APPARATUS THEREFOR
Document Type and Number:
Japanese Patent JP3520957
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the quality of a polycrystalline semiconductor ingot formed by unidirectional solidification by lessening its distortion.
SOLUTION: A silicon semiconductor material 15 is charged into a crucible 1 and inner crucible 2 of a double structure and is heated from above by the radiation heat from a heating element 8 for heating by an induction heating coil 7, by which this material is melted. The bottom of the crucible 1 is placed on a supporting base 4 cooled by the cooling water from a cooling vessel 13. The semiconductor material is melted in the inner crucible 2 and the solidification is started from the bottom. Although the volume of the silicon semiconductor material 15 expands at the time of solidification, a gap is formed between the inner crucible 2 and the crucible 1 and, therefore, if the inner crucible 2 expands outward together with the silicon semiconductor material 15, the distortion at the time of the solidification is lessened and the good polycrystalline semiconductor ingot is obtd.
Inventors:
Yamazaki, Motoharu
Okuno, Tetsuhiro
Okuno, Tetsuhiro
Application Number:
JP16628997A
Publication Date:
April 19, 2004
Filing Date:
June 23, 1997
Export Citation:
Assignee:
SHARP CORP
International Classes:
C01B33/02; C01B33/037; C30B11/00; C30B21/02; C30B28/06; C30B29/06; H01L21/208; H01L31/04; (IPC1-7): C01B33/02
Other References:
Ｏ．ＭＩＮＳＴＥＲ，ＭＯＬＤＩＮＧ ＡＮＤ ＤＩＲＥＣＴＩＯＮＡＬ ＳＯＬＩＤＩＦＩＣＡＴＩＯＮ ＯＦ ＳＯＬＡＲ−ＧＲＡＤＥ ＳＩＬＩＣＯＮ ＵＳＩＮＧ ＡＮ ＩＮＳＵＬＡＴＩＮＧ ＭＯＬＴＥＮ ＳＡＬＴ ，ＪＯＵＲＮＡＬ ＯＦ ＣＲＹＳＴＡＬ ＧＲＯＷＴＨ，１９８７年，ＶＯＬ．８２ ，ｐ．１５５−１６１
Attorney, Agent or Firm:
西教 圭一郎