Title:
PRODUCTION OF POLYCRYSTALLINE SEMICONDUCTOR THIN FILM AND MANUFACTURING DEVICE THEREFOR
Document Type and Number:
Japanese Patent JPH1164883
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a polycrystalline silicon thin film with large crystal grains which attains high performance and high uniformity of a polycrystalline silicon thin film transistor and is excellent in productivity. SOLUTION: In a method for melting and recrystallizing the silicon thin film by irradiating the amorphous silicon thin film 3 with excimer laser beams 5, temp. gradient in a planar direction in a plane is controlled by inserting a mask 13 on which repititive patterns are formed into an optical path of the excimer laser beams 5 for irradiating the silicon thin film 3 and irradiating the surface of the silicon thin film 3 with the beams 5, energy of which is modulated by the mask patterns. At the same time, a substrate on which the silicon thin film 3 is formed is successively moved by synchronizing with laser irradiation to form a polycrystal line silicon.
Inventors:
SUZUKI KOJI
Application Number:
JP21721397A
Publication Date:
March 05, 1999
Filing Date:
August 12, 1997
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G02F1/136; G02F1/1368; H01L21/20; H01L21/336; H01L29/786; (IPC1-7): G02F1/136; H01L21/20; H01L29/786; H01L21/336
Attorney, Agent or Firm:
Togawa Hideaki
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