To provide a production process of a semiconductor device that assures a measuring structure without increasing the area of the semiconductor device and directly measures the capacity value of the manufactured semiconductor device as well as the structure of the semiconductor device.

The production process of a semiconductor device prepares ring-shaped interconnections at the periphery surrounding an internal circuit region where circuit elements are formed such that they mutually face multiple wiring layers respectively through interlayer insulating films, wherein the ring-shaped interconnections prepared in vertically adjacent double-layered wiring layers within the multiple wiring layers are formed so as to be insulated from each other, the capacity between these double-layered ring-shaped interconnections are measured, and after that, at least one of the double-layered ring-shaped interconnections is connected to the internal circuit.