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Patent Searching and Data


Title:
PRODUCTION PROCESS OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2009188152
Kind Code:
A
Abstract:

To provide a production process of a semiconductor device that can reduce as many individual adjustments as possible in a mass production method of the semiconductor device, which can obtain an initial discharging characteristic of stable plasma at high speed.

The production process of a semiconductor device has the steps of generating a matrix for associating capacitance changes of a variable capacitance element with high frequency power changes of reflected waves, setting a specific value from this matrix as an initial capacitance of the variable capacitance element, and measuring the above power of reflected waves and comparing it against a predetermined upper limit. In short, correspondences between the capacitances of the variable capacitance element and the powers of reflected waves are maintained as a matrix. Further, when the power exceeds the upper limit, the steps should be provided to select and determine a capacitance of the variable capacitance element from the above matrix, so that this power becomes less than the upper limit. In this way, since the capacitance of the variable capacitance element that matches impedance is selected and set from the matrix maintained in advance, plasma can be stabilized at extremely high speed.


Inventors:
Oishi, Tomoaki
Application Number:
JP2008000025963
Publication Date:
August 20, 2009
Filing Date:
February 06, 2008
Export Citation:
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Assignee:
PANASONIC CORP
International Classes:
H01L21/205; C23C16/505; C23C16/52; H03H7/40; H05H1/46
Attorney, Agent or Firm:
福井 豊明