Title:
PRODUCTION PROCESS OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS51123087
Kind Code:
A
Abstract:
PURPOSE:Preventing the etching intervension in the area just under the polycrystal Si-gate electrode chip, and producing Si-gate MOSIC having smoother surface to prevent A1 wiring from disconnection.
Inventors:
YASUI JIYUUROU
YONEDA TADAO
YONEDA TADAO
Application Number:
JP4773975A
Publication Date:
October 27, 1976
Filing Date:
April 18, 1975
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L29/78; H01L21/302; H01L21/306; H01L21/3205; H01L21/336; (IPC1-7): H01L21/302; H01L21/94
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