Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS53129981
Kind Code:
A
Abstract:
PURPOSE: To prevent consumption by thermal oxidation of gate electrode and make its thickness in compliance with designaed value by providing the process of providing a polycrystalline Si film on a semiconductor substrate containing a polycrystalline Si gate electrode, coverting this to a SiO2 film, thereafter providing openings therein and forming source and drain regions.
Inventors:
SHIRAI KAZUNARI
TANAKA SHINPEI
TANAKA SHINPEI
Application Number:
JP4495977A
Publication Date:
November 13, 1978
Filing Date:
April 19, 1977
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L29/78; H01L21/225; H01L21/28; H01L29/06; (IPC1-7): H01L21/225; H01L21/28; H01L29/06; H01L29/52; H01L29/78