Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5320862
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor device of good noise characteristics free from the decrease in breakdown voltage and the leakage current by suitably annealing the substrate provided with an oxide film in a non-oxidative atmosphere.
Inventors:
SHIMIZU HIROBUMI
AOSHIMA TAKAAKI
YOSHINAKA AKIRA
SUGITA YOSHIMITSU
AOSHIMA TAKAAKI
YOSHINAKA AKIRA
SUGITA YOSHIMITSU
Application Number:
JP9487876A
Publication Date:
February 25, 1978
Filing Date:
August 11, 1976
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L29/78; H01L21/316; H01L21/324; H01L21/329; H01L21/331; H01L29/72; H01L29/73; H01L29/74; (IPC1-7): H01L21/324; H01L29/72; H01L29/74; H01L29/91
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