Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5451377
Kind Code:
A
Abstract:
PURPOSE:To achieve selective diffusion of aluminum at a high concentration with high accuracy and within a short time by converting the surfaces of the aluminum selective vapor deposition layers formed on the surfaces of a silicon substrate to an aluminum film then performing alloy diffusion through heat treatment. CONSTITUTION:Aluminum vapor deposition layers 2, 3 are formed on both main surfaces of a silicone substrate 1 and the layers 2, 3 are formed to required patterns 2a, 3a through photolithography. The surfaces of the layers 2a, 3a are converted to alumina films 4, 5 through anodic oxidation. The substrate 1 is heat-treated to cause selective diffusion of aluminum and form P type punch-through diffused layers 7. Thereafter, the aluminas 4, 5 and silicon aluminum alloy layers 6 are removed by etching with hot phosphoric acid and aquaregia and junctions are formed by executing oxidation photolithography, base diffusion of boron, emitter diffusion of phosphorus, etc Next, glass passivation 8 is applied to form electrodes 9.
Inventors:
MOCHIZUKI YASUHIRO
YATSUNO KOUMEI
OGAWA TAKUZOU
YATSUNO KOUMEI
OGAWA TAKUZOU
Application Number:
JP11672377A
Publication Date:
April 23, 1979
Filing Date:
September 30, 1977
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/225; H01L21/22; (IPC1-7): H01L21/22