Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS5469393
Kind Code:
A
Abstract:
PURPOSE:To obtain a flat multilayer wiring without using liquid glass by separating a wiring metallic film into a wiring part and a non-wiring part by a groove and burying this groove with insulating materials. CONSTITUTION:Polycrystal Si film 12 is grown in a vapour phase on Si substrate 11, and groove forming photo resistor pattern 13 to separate a metallic wiring from other metallic films is formed on film 12. Next, Al film 14 is evaporated throughout the surface, and pattern 13 is removed to generate Al wiring part 14', and a groove between film 14 and part 14' is etched to expose the surface of substrate 11. After that, PSG film 15 is grown throughout the surface to bury the groove with film 15, and an electrode contact window is opened on wiring part 14'. After that, the second-layer Al wiring 16 is evaporated from wiring part 14' to film 15, thereby giving a multilayer wiring structure. As a result, no cut is generated in the second-layer Al wiring, and a flat surface can be obtained.
Inventors:
ABE SHIGEHARU
SERIGANO MAKOTO
SERIGANO MAKOTO
Application Number:
JP13716277A
Publication Date:
June 04, 1979
Filing Date:
November 14, 1977
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/3205; H01L21/302; H01L21/306; (IPC1-7): H01L21/302; H01L21/90