Title:
PRODUCTION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPS55125633
Kind Code:
A
Abstract:
PURPOSE:To improve the reliability of the device preventing damage to the surface of the semiconductor substrate when the protective film is formed by forming an inorganic insulating protective film formed through a precoat by polyimide resin. CONSTITUTION:A resist film 6a is applied on the source and the drain electrodes 3 and 4 of FET of GaAs with the gate region exposed. Then, it is coated with a precoat for a polymide resin and treated at a specified temperature. With the lift-off of the resist film 6a and the precoat 9, an oxidation is performed at a given temperature, and an insulating protective film 10 made of inorganic substance such as SiO2 is formed by sputtering. Then, an opening is given on the film over the electrodes 3 and 4. In this method, the formation of the inorganic protective film protects the surface of the semiconductor from damage thereby improving the reliability of the device. Thus, production of a good yield is possible.
Inventors:
SUZUKI TAKESHI
HATAKEYAMA HIRONOBU
HATAKEYAMA HIRONOBU
Application Number:
JP3400779A
Publication Date:
September 27, 1980
Filing Date:
March 22, 1979
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/312; H01L21/31; (IPC1-7): H01L21/306; H01L21/94
Domestic Patent References:
| JPS5285474A | 1977-07-15 | |||
| JPS52127785A | 1977-10-26 |