To provide a method for producing a semiconductor sensor by which offset voltage is allowed approach around zero, without being affected by the variance in the wire widths of a gauge mask to be patterned.
A semiconductor pressure sensor is provided with gauge resistances 12 to 15 on its beam part. The gauge resistances 12 to 15 are connected electrically with aluminum electrodes 25 and 26 through contact holes 23 and 24, thereby forming a bridge circuit. The gauge resistances (P+-type impurity diffused layer) 12 to 15 are formed in wafer state in respective chip forming region, and at lest either of a resistance value of the gauge resistance or the output value of the bridge circuit is measured. Further, the contact position of the gauge resistances 12 to 15 or the shape of a contact hole thereof is adjusted according to the measured result, and the offset voltage of the bridge circuit in the respective chip forming region is adjusted.
KARESUE SHIYOUWA
AO KENICHI
MURATA MINORU
ISHIO SEIICHIRO
| JPS6058609A | 1985-04-04 | |||
| JPS5737252A | 1982-03-01 |