PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL

Title:

PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL

Document Type and Number:

Japanese Patent JPH04275994

Kind Code:

A

Abstract:

PURPOSE:To obtain an improved method for producing semiconductor single crystal capable of insuring the concn. of impurity of a single-crystal wafer. CONSTITUTION:When crystal is arranged in the producing equipment of semiconductor single crystal and grown, the temp. of a graphite member is raised. Vacuum heating is performed for the graphite member while preceding growth of semiconductor single crystal. Then after the temp. of the inside of the producing equipment is lowered, this producing equipment is opened and the raw material of semiconductor single crystal is introduced thereinto and semiconductor single crystal is grown. In this producing method of semiconductor single crystal, opening of the equipment after vacuum heating is performed when the temp. of the graphite member is regulated to >=373K (treatment for gas discharged from the graphite member).

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Inventors:

NISHIO JOSHI
FUJITA HIROMOTO

Application Number:

JP5399691A

Publication Date:

October 01, 1992

Filing Date:

February 26, 1991

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

C30B11/00; C30B13/00; C30B15/00; C30B29/06; C30B29/40; H01L21/208; (IPC1-7): C30B11/00; C30B13/00; C30B15/00; C30B29/06; C30B29/40; H01L21/208

Attorney, Agent or Firm:

Norio Ohu

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