PURPOSE: To improve the purity and dimensional accuracy of a thin-wall and lightweight member by converting a carbon fiber compact prepared by vapor deposition of silicon into silicon carbide.

CONSTITUTION: A carbon fiber compact formed into a prescribed shape is heated at 1000-1400°C in a mixed gas of 2-10mol% halosilane and hydrogen to carry out vapor deposition of silicon in the carbon fiber compact. The resultant compact is then heated at a temperature (1450-1500°C) above the melting point of the silicon in a nonoxidizing atmosphere or under a vacuum and converted into silicon carbide.