PURPOSE: To form the title silicon dioxide coated film on the surface of a substrate with good controllability and at a low cost by dipping an electrode made of a metal in a saturated soln. of silicon dioxide in hydrofluosilicic acid, dissolving the metal electrolytically to obtain a supersaturated soln. of silicon dioxide, and bringing the soln. into contact with the substrate.
CONSTITUTION: The electrode made of a metal (e.g., Mg and Al) is dipped in the processing soln. consisting of the saturated soln. of silicon dioxide in hydrofluosilicic acid, a voltage is impressed between the processing soln. and the metallic electrode to dissolve the metal of the electrode in the processing soln., and a supersaturated soln. of silicon dioxide is obtained. The processing soln. is then brought into contact with the substrate (e.g., a glass substrate) to deposit a silicon dioxide coated film on the substrate surface, and a silicon dioxide coated film is obtained. By this method, the amt. of the metal to be dissolved in the processing soln. can be easily controlled, hence the forming rate of the silicon dioxide coated film can be controlled, and the production control is facilitated.
HISHINUMA AKIMITSU
KITAOKA MASAKI
AIDA TAKUJI
KAWAHARA HIDEO
DEKI SHIGETO
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