Title:
PRODUCTION OF SILICON MICROSENSOR
Document Type and Number:
Japanese Patent JP3070669
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a production method by which the adhesion of micro-bridge structure to a base after drying can be prevented and the micro-bridge structure adhered thereto can be recovered in the case where the surface of substrate made of silicon is subjected to micro-machining for the formation of a micro- bridge structure through wet etching of a sacrificial layer.
SOLUTION: A sacrificial layer is selectively etched with an alkali etching liquid, and at the time the etching is completed, it is cleaned with water and the etching liquid is replaced with pure water. Next, a sample dipped in the pure water is immediately moved to an isopropyl alcohol vapor device, and the lower part of a diaphragm 16 is replaced by a high-temperature isopropyl alcohol vapor 31. Finally, the sample is exposed in the air to dry its cavity, resulting in a desired micro-bridge structure 18.
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Inventors:
Masayuki Kanzaki
Masahiko Sano
Masahiko Sano
Application Number:
JP21640297A
Publication Date:
July 31, 2000
Filing Date:
August 11, 1997
Export Citation:
Assignee:
NEC
International Classes:
H01L29/84; H01L21/306; H01L27/14; H01L37/00; (IPC1-7): H01L29/84; H01L37/00
Domestic Patent References:
| JP6252420A | ||||
| JP8335705A |
Attorney, Agent or Firm:
Masaru Watanabe (3 outside)