Title:
PRODUCTION OF SILICON NITRIDE-BASED SINTERED COMPACT
Document Type and Number:
Japanese Patent JPH0543330
Kind Code:
A
Abstract:
PURPOSE: To provide a method for producing a silicon nitride-based sintered compact having high strength with hardly any defects.
CONSTITUTION: A raw material for a silicon nitride sintered compact is mixed and pulverized in a pulverizer made of the silicon nitride, previously sintered at a temperature within the range of 1500-1650°C and then subjected to hot isostatic sintering (post-HIP).
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Inventors:
TAKATORI KAZUMASA
Application Number:
JP22957491A
Publication Date:
February 23, 1993
Filing Date:
August 15, 1991
Export Citation:
Assignee:
TOYOTA CENTRAL RES & DEV
International Classes:
C04B35/584; C04B35/58; (IPC1-7): C04B35/58