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Title:
PRODUCTION OF SILICON SINGLE CRYSTAL AND HEATER FOR PERFORMING THE SAME
Document Type and Number:
Japanese Patent JPH10194891
Kind Code:
A
Abstract:

To shorten the time required for melting silicon, to prevent a crucible from being overheated and to stabilize a silicon melt by using a coil heater placed on the underside of the crucible and inductively supplying energy to the crucible for a specified period of time, in the production using a quartz glass crucible.

In this production that comprises melting silicon in a quartz glass crucible 1 to form a melt and pulling up a single crystal from the melting to produce the objective silicon single crystal, as a bottom heater 4 placed on the underside of the crucible 1, a coil heater is used to inductively supply energy to the crucible 1 for a specified time. At the time of melting silicon, preferably, the heater 4 is initially operated by passing a high-frequency AC current through the heater 4 to rapidly melt silicon and, thereafter, operated by passing a low-frequency AC current through the heater 4 to stabilize the melting. At the time of pulling up a single crystal, the heater 4 can be operated by passing a DC current having a normal resistance-heating function through the heater 4.


Inventors:
AMMON WILFRIED VON
TOMZIG ERICH DR
FUCHS PAUL
GELFGAT YURI PROF
Application Number:
JP34146697A
Publication Date:
July 28, 1998
Filing Date:
December 11, 1997
Export Citation:
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Assignee:
WACKER SILTRONIC HALBLEITERMAT
International Classes:
H05B6/18; C30B15/00; C30B15/14; C30B15/30; C30B29/06; H05B6/02; H05B6/24; (IPC1-7): C30B29/06; C30B15/14; H05B6/18
Attorney, Agent or Firm:
Tadashi Hagino (3 outside)