PRODUCTION OF SILICON SINGLE CRYSTAL WAFER AND SILICON SINGLE CRYSTAL WAFER

Title:

PRODUCTION OF SILICON SINGLE CRYSTAL WAFER AND SILICON SINGLE CRYSTAL WAFER

Document Type and Number:

Japanese Patent JPH11322490

Kind Code:

A

Abstract:

To provide a method for simply producing a silicon single crystal wafer having very few defects in high productivity by inhibiting the growth of crystal defects, in particular, the growth of crystal defects in a surface layer of the wafer, and also surely removing the crystal defects by subjecting the wafer to heat treatment for a short period of time, even when crystal defects having low density are caused, in a single crystal wafer produced by a CZ (Czochralski) method.

The production of silicon single crystal wafer comprises: growing a silicon single crystal bar doped with nitrogen by a CZ method; slicing the silicon single crystal bar into silicon single crystal wafers; and thereafter, subjecting the wafers to heat treatment with a rapid-heating/rapid-cooling device. Thus, the objective silicon single crystal wafer is produced by this production method.

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Inventors:

TAMAZUKA MASARO
KOBAYASHI NORIHIRO
OKA TETSUSHI

Application Number:

JP4463499A

Publication Date:

November 24, 1999

Filing Date:

February 23, 1999

Export Citation:

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Assignee:

SHINETSU HANDOTAI KK

International Classes:

C30B29/06; H01L21/324; (IPC1-7): C30B29/06

Attorney, Agent or Firm:

Mikio Yoshimiya

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