Title:
PRODUCTION OF SILICON SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS55100296
Kind Code:
A
Abstract:
PURPOSE:To enhance the yield of silicon single crystal production by a pulling method using a quartz crucible by applying a rotating magnetic field to the crucible from the outside to control the oxygen content of single crystal silicon. CONSTITUTION:In production of a silicon single crystal by the Czochralski method, by varying the direction and intensity of a rotating magnetic field from the outside of a crucible with a heater using three-phase AC, convection of molten silicon in the crucible and flowing of the melt surface are controlled. Penetration of O2 into the molten silicon due to slow dissolution of quartz from the quartz crucible surface is inhibited by controlling the degree of evaporation as SiO2 on the melt surface to control the amt. of O2 contained in a pulled crystal to 15-20 atomic ppm. Thus, single crystal silicon of superior properties is produced in a high yield.
Inventors:
OSADA KIMIO
KOBAYASHI KAZUO
TAKESHIMA TOAO
KOBAYASHI KAZUO
TAKESHIMA TOAO
Application Number:
JP539979A
Publication Date:
July 31, 1980
Filing Date:
January 18, 1979
Export Citation:
Assignee:
OSAKA TITANIUM
International Classes:
C30B15/20; C30B15/00; C30B15/30; C30B29/06; H01L21/18; H01L21/208; (IPC1-7): C30B15/00; C30B29/06; H01L21/18
Domestic Patent References:
| JPS4949307A | 1974-05-13 |
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