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Patent Searching and Data


Title:
PRODUCTION OF SINGLE CRYSTAL BY PULLING METHOD
Document Type and Number:
Japanese Patent JPH10259089
Kind Code:
A
Abstract:

To provide a method for producing a single crystal, not polluting melt even if a seed crystal holder breaks and drops in a crucible, capable of reusing same melt therefore and reducing frequency of melt exchange and improving yield of a product as a result.

A seed crystal 30 is charged through a seed crystal holder 26 into the lower end of a pulling shaft 22 and the seed crystal 30 is brought into contact with a melt 32 in a crucible 14 and the seed crystal is pulled while rotating a pulling shaft or either one or both of the crucible to grow a single crystal. The seed crystal holder is prepared by using a material composed of only element constituting the grown single crystal 34. The seed crystal may be prepared from polycrystal having the same composition as the grown single crystal, but it is preferred to prepare a single crystal having a same composition as the grown single crystal from the viewpoint of mechanical strength, etc.


Inventors:
FUJII SHINZO
INAGAKI TOSHIMITSU
Application Number:
JP8460397A
Publication Date:
September 29, 1998
Filing Date:
March 18, 1997
Export Citation:
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Assignee:
FUJI ELECTROCHEMICAL CO LTD
International Classes:
C30B15/32; C30B29/28; C30B29/30; (IPC1-7): C30B15/32; C30B29/28; C30B29/30
Attorney, Agent or Firm:
Shigemi