Title:
PRODUCTION OF SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS58104098
Kind Code:
A
Abstract:
PURPOSE:When a single crystal of a compound from elements in groups III and V of the periodic table is produced by the boat growing method, the sealed tube for single crystal growth is insulated by use of an insulating material covering its lower half to inhibit deviation in physical properties. CONSTITUTION:When a single crystal of a compound from elements in group III and V of the periodic table such as GaAs is produced by the boat growing method, the sealed tube 2 containing the boat 1 for single crystal growth is kept hot by covering the lower half with the insulating material 14 and a multilayered thermal equalizer. The heat insulator 14 is made of aluminosilicate ceramic fibers suitably. The resultant single crystal has high crystallinity and the distribution of n type, p type and other type dopants is homogeneous, thus the physical properties within the same wafer surface is small in deviation and especially uniform in the pinch-off voltage after ion implantation.
Inventors:
ORITO FUMIO
Application Number:
JP20283081A
Publication Date:
June 21, 1983
Filing Date:
December 16, 1981
Export Citation:
Assignee:
MITSUBISHI MONSANTO CHEM
International Classes:
C30B11/04; C30B11/00; C30B29/40; H01L21/208; (IPC1-7): C30B11/00; C30B29/40; H01L21/18
Attorney, Agent or Firm:
Hasegawa Hajime