Title:
PRODUCTION OF SUBSTRATE
Document Type and Number:
Japanese Patent JP3188673
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To solve the problem of side lob which occurs in the production of a substrate with a resist pattern thereon by bringing a photoresist applied on a substrate into contact with an alkaline gas after exposure through a photomask and before development.
SOLUTION: A wafer is put in a truck having ≤1 ppb alkaline gas concn. (81) and a chemical amplification type resist is applied on the wafer (82), hardened (83), cooled (84), exposed through a half tone phase shift mask (85) and allowed to stand. After contact with an alkaline gas, the wafer is heat-treated again (87) and immersed in an alkali developer to carry out development (88) and the resultant resist pattern is perfectly hardened by further heat treatment (89). The wafer is then taken out of the truck (90) and the production of the objective substrate with a prescribed resist pattern formed thereon is finished.
Inventors:
Liang Hyun
Application Number:
JP19834898A
Publication Date:
July 16, 2001
Filing Date:
July 14, 1998
Export Citation:
Assignee:
ELGE SEMICON Company Limited
International Classes:
G03F7/26; G03F7/38; H01L21/027; G03F7/039; G03F7/004; (IPC1-7): G03F7/38; G03F7/039; G03F7/26; H01L21/027
Domestic Patent References:
| JP7169671A | ||||
| JP5190440A | ||||
| JP446346A | ||||
| JP3226758A | ||||
| JP335240A | ||||
| JP313950A | ||||
| JP281050A | ||||
| JP192741A | ||||
| JP5915240A |
Attorney, Agent or Firm:
Hajime Tsukuni (3 outside)