PURPOSE: To easily and efficiently form a high grade thin superconducting ceramic film on a wire by heating the raw material contg. at least Bi, Sr, Ca and Cu as the vaporization source, and forming a thin film on the wire under reduced pressure by chemical vapor deposition.
CONSTITUTION: The alkoxides of Bi, Sr, Ca and Cu or the β-diketone complexes are charged into the raw material containers 1-4, and respectively heated to a specified temp. lower than 300°C by raw material heaters 5. A carrier gas such as gaseous Ar is introduced into the containers 1-4 from inert gas inlets 6. As a result, the raw gas contg. respective component elements is introduced into a reaction vessel 8. A substrate 9 of the wire arranged in the vessel 8 is heated to about 800-810°C by a substrate heater 10, the vessel is simultaneously evacuated, and gaseous O2 is introduced from a gaseous oxygen inlet 7. By this process, a thin oxide-based superconducting ceramic film is deposited on the substrate 9 at a high vapor-depositing rate, and a superconducting ceramic wire is obtained.
HIRAI TOSHIO
YAMANE HISANORI
JAPAN RES DEV CORP
HIRAI TOSHIO
YAMANE HISANORI