Title:
PRODUCTION OF SUPERCONDUCTING THIN FILM
Document Type and Number:
Japanese Patent JPH01167218
Kind Code:
A
Abstract:
PURPOSE:To obtain a superconducting thin film of a compound oxide having high critical current density, by preparing a superconducting thin film of a compound oxide containing a specific compound oxide as a main component by using a sputtering process imposed with a specific high-frequency electric power. CONSTITUTION:A superconducting thin film of a compound oxide composed mainly of a compound oxide expressed by formula is produced by a sputtering process while adjusting the high-frequency electric power applied in film-forming within a range of 0.064-1.27[w/cm<2>]. In the formula, alpha is Ba or Si and x is 0<=x<1. The sputtering is carried out preferably by controlling the film-forming speed to 0.1-0.8Angstrom /sec. The thickness of the film is adjusted preferably to 0.5-2mum. The sputtering is preferably carried out under a pressure of 0.01-0.3Torr in an atmosphere containing 5-95mol% of O2.
Inventors:
TANAKA SABURO
ITOZAKI HIDEO
HIGAKI KENJIRO
YATSU SHUJI
JIYOUDAI TETSUJI
ITOZAKI HIDEO
HIGAKI KENJIRO
YATSU SHUJI
JIYOUDAI TETSUJI
Application Number:
JP32470287A
Publication Date:
June 30, 1989
Filing Date:
December 22, 1987
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C01G3/00; C01G1/00; C04B41/87; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C01G3/00; C04B41/87; H01B12/06; H01B13/00; H01L39/24
Domestic Patent References:
| JPS6435819A | 1989-02-06 | |||
| JPS6414814A | 1989-01-19 |
Attorney, Agent or Firm:
Takashi Koshiba