PURPOSE: To raise the critical temperature by specifying the number of sputtering targets, content thereof, temperature of a basal plate, the speed of film formation, etc., in production of the subject Bi-Pb-Sr-Ca-Cu-O-based superconductive thin film using the sputtering method.
CONSTITUTION: Two or more sputtering targets are used and a mixture of Bi and Pb is used as one of them. The target substances are deposited in layers on a sputtering basal plate in order using the sputtering method at ≤50/min speed of film formation while heating the basal plate at 640-710°C to produce the objective Bi-Pb-Sr-Ca-Cu-O-based oxide superconductive thin film. Because of the low temperature of the basal plate and the low speed of film formation in comparison with the conventional method as shown above, a 100k superconductor phase can be readily formed. In addition, the thickness of the film produced by depositing each composition in layers in order is preferably ≤50.
TSUKAMOTO KEIZO
YAMAGISHI CHIFUMI
