Title:
PRODUCTION OF TANTALUM COMPOUND
Document Type and Number:
Japanese Patent JP3202924
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain the subject compound having high vapor pressure on an industrial scale at a low cost by reacting a specific haloalkoxy tantalum compound with a methylated metal compound and recovering the product by vacuum distillation.
SOLUTION: The objective tantalum compound is expressed by the formula II and useful e.g. as a material for forming an tantalum oxide film useful e.g. as a high-dielectric insulation film for the production of semiconductor devices such as a very large scale integrated circuit. It can be produced without generating by-product and dispensing with precise control of the amount of reactants by dissolving a haloalkoxytantalum compound expressed by the formula I (X is a halogen; R is a 2-7C alkyl) (e.g. dichlorotriethoxytantalum) in a solvent such as diethyl ether, cooling the solution to -40°C, dropping a diethyl ether solution of a methylated metal compound (e.g. methyllithium) little by little to the cooled solution, stirring the mixture at -40°C for 1.5hr, distilling out the solvent and subjecting the residual brown solid to vacuum distillation.
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Inventors:
Toshiyuki Suzuki
Hideyuki Mori
Koichi Nakamura
Hideyuki Mori
Koichi Nakamura
Application Number:
JP20606396A
Publication Date:
August 27, 2001
Filing Date:
August 05, 1996
Export Citation:
Assignee:
Japan Energy Co., Ltd.
International Classes:
C07F9/00; C23C16/18; C23C16/40; (IPC1-7): C07F9/00
Other References:
【文献】Organometallics,Vol.1,No.8(1982)p.1098-p.1100
Attorney, Agent or Firm:
Hidetake Komatsu (2 outside)