Title:
PRODUCTION OF TANTALUM OXIDE-SILICON OXIDE MIXED FILM
Document Type and Number:
Japanese Patent JPH02111871
Kind Code:
A
Abstract:
PURPOSE: To produce an oxide film having a small loss in a wide formation temp. range in which easy control is ensured by forming a Ta2O5-SiO2 mixed film by sputtering and annealing thermally the mixed film at an arbitrary temp.
CONSTITUTION: A Ta2O5-SiO2 mixed film is formed on a substrate by sputtering. This film has an arbitrary refractive in the wide range of about 1.46-2.1 in accordance with the mixing ratio between Ta2O5 and SiO2. The mixed film is thermally annealed at 300-700°C for about ≤60min to obtain an oxide film having a small loss of about ≥0.5dB/cm. This oxide film is applicable to optical parts, etc., in various fields and can improve the performance of the parts.
Inventors:
SHUDO KEIZO
UEOKA YASUSHIGE
UEOKA YASUSHIGE
Application Number:
JP26211388A
Publication Date:
April 24, 1990
Filing Date:
October 18, 1988
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G02B6/13; C01G35/00; C03C3/04; C23C14/08; C23C14/58; G02B6/12; (IPC1-7): C01G35/00; C03C3/04; C23C14/08; C23C14/58; G02B6/12
Domestic Patent References:
| JPS6273202A | 1987-04-03 | |||
| JPS57130303A | 1982-08-12 |
Attorney, Agent or Firm:
Amamiya Masaki