To provide a method for producing a thin film capable of stably vaporizing its raw materials, capable of suppressing the influence of a raw material which has not been vaporized and free from the need of the reorganization of the producing device even in the case the kinds of the raw materials increases, and to provide a producing device therefor.

A device 10 for producing a thin film by an MOCVD method contains a raw material tank 12, where a soln. obtd. by dissolving all raw materials in the same solvent is charged. The raw material soln. is fed to a vaporizer 22 by an electromagnetic pump 18 and is vaporized to obtain a gaseous starting material. The gaseous starting material is fed to a film forming chamber 30 by gaseous Ar fed from MFC 24. The pressure on the inside of the film forming chamber 30 is reduced by a vacuum pump 38, and in a state in which it is set to the film forming temp., a substrate is brought into contact with the gaseous starting material and gaseous O2 fed from MFC 32. A drain recoverer 46 for recovering the raw material soln. which has not been vaporized is set in the lower direction of the vaporizer 22. The secondary side of the vaporizer 22 is heated for vaporizing the raw material soln., but, the drain recoverer 46 is not heated.