Title:
PRODUCTION OF THIN SINGLE CRYSTAL FILM
Document Type and Number:
Japanese Patent JPH01257194
Kind Code:
A
Abstract:
PURPOSE:To easily obtain a thin single crystal film with good reproducibility at a high film forming rate by using the complex of specified org. fluorine compd. and metal as a raw compd. at the time of producing a thin single crystal film by the chemical vapor deposition of an organometal. CONSTITUTION:An org. compd. expressed by formula I (R is 1-4C fluorinated lower alkyl) and an aq. soln. of a metallic compd. (e.g., barium chloride) such as a metal hydroxide and a metallic salt are mixed, the pH is regulated to deposit a crystal, and the crystal is recrystallized to produce the complex (shown by formula II) of the compd. of formula I and a metal. The complex is used as the raw material, and a thin single crystal film is produced by the chemical vapor deposition of an organometal. Since the complex has a high vapor pressure, the thin film can be formed at a high rate. When the complex of the compd. of formula I and Ba, the complex with Y, and the complex with copper are jointly used as the raw material, a Y-Ba-Cu-O based thin ceramic film can be produced.
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Inventors:
TSUNODA TAKUMI
ISHICHI KOJI
ISHICHI KOJI
Application Number:
JP8309388A
Publication Date:
October 13, 1989
Filing Date:
April 06, 1988
Export Citation:
Assignee:
UBE INDUSTRIES
International Classes:
H01L39/24; C01B13/20; C01G1/00; C01G3/00; C07F1/08; C07F3/00; C07F5/00; C23C16/18; C30B25/02; C30B29/22; (IPC1-7): C01B13/20; C01G3/00; C07F1/08; C07F3/00; C07F5/00; C23C16/18; C30B25/02; C30B29/22; H01L39/24
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