Title:
PRODUCTION OF TUNGSTEN SELECTIVELY ORIENTED IN <111> DIRECTION
Document Type and Number:
Japanese Patent JPS61153268
Kind Code:
A
Abstract:
In the reactive deposition from a gaseous phase containing tungsten hexafluoride and hydrogen on a substrate at an overall pressure of 10 to 100 hPa (low-pressure CVD method) an inert carrier gas is enriched with a rare earth metal acetyl acetonate hydrate and is conducted across the substrate and the growing tungsten layer together with the reactive gases tungsten hexafluoride and hydrogen.
Inventors:
GEORUGU GERUTONAA
PEETAA YANIERU
PEETAA YANIERU
Application Number:
JP28123385A
Publication Date:
July 11, 1986
Filing Date:
December 16, 1985
Export Citation:
Assignee:
PHILIPS NV
International Classes:
C22F1/00; C22F1/18; C23C16/14; C30B25/02; H01J9/04; (IPC1-7): C22F1/18
Domestic Patent References:
| JPS58106735A | 1983-06-25 |
Attorney, Agent or Firm:
Akihide Sugimura