PURPOSE: To produce a zinc oxide film having superior C-axis orientational property by high speed film formation by performing sputtering by the use of zinc oxide as target while specifying substrate temp. and film forming velocity, respectively.

CONSTITUTION: In a method for producing a zinc oxide film by a sputtering method, film formation is done under the film forming conditions of 250-350°C substrate temp. and 2.0-8.0μm/hr film forming velocity by using zinc oxide as target. As this sputtering method, an RF magnetron sputtering method is preferred. By this method, the zinc oxide film excellent in C-axis orientational property can be obtained at high speed.